Denuded Zone — Intrinsic Gettering (DZ-IG) Wafer

Denuded Zone - Intrinsic Gettered ( DZ-IG ) wafers are available from SEH. These wafers apply standard thermal processes or customer defined thermal processes to create a zone near the surface of the wafer in which oxygen has been out-diffused and cannot precipitate. Under this Denuded Zone ( DZ ), a region with a high density of oxygen precipitates can be formed. This region offers good Intrinsic Gettering (IG) of metallic impurities.

The thermal process used typically consists of a high temperature step to create the DZ, and several steps for nucleation and growth of oxygen precipitates in the IG zone.

The application of DZ-IG wafers may provide added value and reduce the cycle time and cost associated with fab processes to achieve this result. SEH is interested in discussions of your specific requirements.

DZ-IG wafers are available in diameters up to 200mm